Preparation Of Oxygen Sensor Electrolyte Membrane By Magnetron Sputtering Method

In the type of imiting current oxygen sensor, the dense diffusion barrier layer and theelectrolyte’s sintering temperature are different, so in order to solve the problem that the totalsintering does not match together, the preparation of sensors usually adopts the method of silkscreen printing technology, ceramics composite technology. However because the compactelectrolyte layer and diffusion barrier layer cannot direct contact, higherrequirements technology on sensor are needed, transmission of the sensor can’t obtain goodeffect.8YSZ can be directly sputtered the LSM base by magnetron sputtering process, As aresult, the8YSZ particles can grow in LSM substrate base, and it can further reduce thethicknessoftheoxygensensor whileitcontactswell.This paper studied the optimum sintering temperature of the LSM dense diffusion barrierlayer, when the temperature is1350℃， it can be compact and closed pore formation,preventing the oxygen from leaking on diffusion barrier layer in the process of test. Wepreparate8YSZ oxygen sensitive film in the LSM base by rf magnetron sputtering method. Inthe sputtering process, parameters were analyzed, such as the change of the reaction gas Ar andO2flow, substrate temperature, sputtering time, sputtering process to the influence of YSZ filmmicrostructure.The experimental study shows that the optimal process parameters for preparation of YSZfilm by rf magnetron sputtering method are that work pressure of0.75Pa, rf power is224w,sputteringtime is1.5h, basal bodytemperature is550℃, thin filmgrowth rate was0.67μm·h-1.According to this parameter, we can get the thinnest and most dense8YSZ oxygen sensitivefilm. which can achieve the basic requirement of oxygen sensor. The process producing oxygensensor is feasible in theory, but in the actual process it still need to further optimize theparameters,inordertoachievebetterresults.