Research On ZnO Thin Film Acceleration Sensor

In this paper, ZnO thin film acceleration sensors developed for the goal. This paperanalyzes the high C-axis oriented ZnO thin film properties, the piezoelectric effect of ZnO thinfilm test (piezoelectric coefficient, hysteresis loop), the design of piezoelectric sensors measuringcircuit, designed the structure of the piezoelectric micro-cantilever force sensor. This work andthe research results are summarized as follows:By magnetron sputtering ZnO thin films deposited on silicon substrates, using XRD,AFM, SEM test means to test the performance of thin film analysis. Of the variousprocess parameters on film properties (substrate temperature, sputtering power, targetdistance, oxygen argon ratio, sputtering pressure and annealing temperature, etc.).Optimize the best conditions:250℃of substrate temperature,100W sputtering power,7.5nm target distance, oxygen argon ratio of5:5,1.0pa sputtering pressure,600℃annealing temperature. Under optimum conditions, the silicon substrate to obtain auniform and dense ZnO films. Obtained film has good surface morphology, the smallroughness (RMS:2.038nm), high C-axis orientation, high resistivity (>107.cm).Longitudinal piezoelectric coefficient measurement by atomic force microscopy anddigital phase-locked amplifier. This completed the longitudinal piezoelectric coefficientof ZnO thin film measurement, the thickness of0.82μm and1.64μm of the ZnO thinfilm longitudinal piezoelectric coefficients corresponding to27.31pm/V and50.31pm/V. Piezoelectric ZnO thin films and long-term stability is good, the film thickness isproportional to the longitudinal piezoelectric coefficient.In this paper, hysteresis loops were measured parameter measurement to verify thepiezoelectric ZnO film increases with the thickness increased.In this paper, micromachined accelerometer works. Mechanical equivalent of theapplication of simulation technology to create the equivalent circuit model of the sensorusing the equivalent circuit model for simulation of micromachined acceleration sensor,the effect is better.This paper discusses the application of MEMS technology. Application of piezoelectricmicro cantilever force sensor structure design. This established the force sensor-chargeconversion efficiency optimization model to optimize the micro-cantilever and thethickness of the film, so that the device power-charge conversion efficiency.With the theory of micro-sensors and MEMS technology to further the development ofmature, need to constantly explore, discover and solve more problems. I hope this work can ZnOpiezoelectric film acceleration sensors that contribute to the development. The inadequacies ofthe text Please experts, teachers criticized the correction.