Study On Technigues Of PECVD Growth Of The SiO₂Thin Film

Silicon oxide thin film because of its hardness and high melting point, antiwearand corrosion resistance of film layer is firm, and the advantages of insulation andgood stability and was used as a dielectric layer, in the semiconductor Si and GaAstechnology such as microelectronics technology, has very extensive application inoptoelectronic devices. Magnetron sputtering method, the thermal oxidation method,liquid gel and sol method, liquid phase deposition and chemical vapor depositionmethod can be used for the preparation of silica films. This paper combined with thecompany’s existing processing equipment conditions, by plasma enhanced chemicalvapor deposition (PECVD) method, using Oxford company plasma lab80plusPECVD equipment for laser technique of masking film silicon oxide thin filmdeposition process was studied.Paper first briefly introduces the common silicon oxide thin film preparationmethod, analyzed the basic principle of PECVD of silicon oxide thin film prepared bythe technique, on the basis of using PECVD technology technique has explored thepreparation process of silicon oxide, by changing the reaction gas flow ratio, rf power,the deposition chamber pressure and deposition process parameters such as time,studies the sedimentary process conditions for silicon oxide thin film growth rate,silicon oxide film refractive index, film thickness, surface morphology and adhesion,combining with the characterization of the samples, the suitable for laser mask silicafilms to optimize process conditions.