Study On Optimization Of Silicon Thin Transistor PECVD Amorphous Film Process

With the rapid development of flat panel display technology, high resolution and low power consumption have been a new technology trend, which has a great relationship with technological parameters, panel material and power consumption design.. The amorphous silicon(a-Si) thin film is the active layer of thin film transistor(TFT), and its good performance is very important for the electrical properties of TFT.. High performance TFT a-Si is the basis for the active drive LCD(AMLCD).In this paper, the technology of amorphous silicon thin film and device is studied, and the technology of amorphous silicon film and device is studied.. We adopt plasma enhanced chemical vapor deposition(PECVD) equipment of prepared amorphous silicon thin films and the TFT device,and based on this, on the relationship between the process parameters and the device characteristics were studied. Firstof all, the gate insulating layer process parameters influence on the device, by changing the gate insulating layer gas ratio,we found that with increasing the ratio of NH3 and N2 gas, the electrical properties of a-Si TFT are greatly improved. The research shows that the ratio of gas is Si H4:NH3:N2= 1:2:30and electrical characteristics of TFT devices best; and the gate insulating layer appropriate to reduce the film thickness,beneficial to enhance the electrical characteristics of TFT.Secondly, we studied the effect of technological parameters of active layer of the device. Studies have shown that effects of channel a-Si layer is the variation of the film thickness on the electrical characteristics of TFT, to identify the channel the best a-Si etching residual thickness, a-Si etch thickness is about 50% of the film thickness, electrical characteristics of TFT devices best, and the study of gas proportion a-Si H content in the proper increase of beneficial to the electrical characteristics of TFT, the optimum gas ratio Si H4:H2=1:4.5.Thirdly, the gas plasma modification of the gate insulation layer with the active layer interface and the back channel interface is studied, and the electrical characteristics of the H2 plasma are improved. At last, the electrical properties of TFT were significantly affected by different annealingtemperatures, and the electrical properties of TFT were best when the temperature was 350?.