Pecvd Prepared Amorphous Silicon Thin Film And Photoelectric Properties Study

Amorphous silicon has very extensive application in the film materials, especially in the solar energy transfer and application area. Because of the easy available substrate, simple manufacturing process, low cost, and easy implementation of large area film deposition, and many other advantages, it has widely attracted people's attention and become one of the research hotspots around the world.Amorphous silicon films were fabricated by the method of plasma enhanced chemical vapor deposition (PECVD), using the silicohydride and hydrogen as the raw materials on the ordinary glass slides. First of all, the technological parameters were optimized by orthogonal experimental, the morphology and microstructures were characterized by Raman microscopy (Raman), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Secondly, based on the optimized technological parameters, the influence on the film quality of amorphous silicon of five factors (substrate temperature, silicohydride flow rate, radio frequency power, and the distance between the two plates) were researched by single-factor experiments. According to the above experiment results, the optimal process parameters for the preparation of amorphous silicon were obtained as following:the substrate temperature is 300℃, the silicohydride flow is 60SCCM, the radio frequency power is 150W, and the distance between the two plates is 25.0mm. Finally, the optical and electrical properties of amorphous silicon films were analyzed by the NKD-8000 thin film analyzer and four-probe instrument respectively.