Crystalline Silicon Thermal Diffusion Doping And The Preparation Of Silicon Thin Film By PECVD

With the fossil energy running out and the increasing request of theenvironment protection the new energies are developing rapidly. Andamong the new energies, the solar energy shows a good potential infuture. The efficiency of the traditional crystalline silicon solar cells is verylow and the cost is very high, on the other hand the stability of thin filmsolar cells is still doubtful. Silicon based with thin film heterojunction solarcell is a new high efficiency solar cell which combines the stability ofcrystal silicon solar cells and low cost of thin film solar cells. It contains aheterojunction which formed by crystal silicon substrate and dopedamorphous/microcrystalline silicon film. The most important influencefactor of the silicon based with thin film heterojunction solar cell is thefabrication of the heterojunction(the deposition of theamorphous/microcrystalline silicon film). In this paper, our studies arelisted as follow:1. The back surface field (BSF) was annealed by muffle furnace withthe boric acid/phosphorus pentoxide. The square resistance and thedoping density of BSF were investigated.2. Amorphous/microcrystalline silicon thin films were deposited byplasma enhanced chemical vapor deposition (PECVD). The growthbehaviors and optical properties of the thin films were investigated.3. Microcrystalline silicon thin films were deposited by PECVD ondifferent substrates. The effect of the substrates on the crystallizationcharacteristics and growth behaviors of microcrystalline silicon thin filmswere investigated.