Investigation On Technology And Properties Of Polycrystalline Silicon Thin Film Prepared By Pecvd

Recently, with the rapid development of solar photovoltaic technology, liquidcrystal and the other fields, the poly crystalline thin films play a important role aselectronic materials, due to its perfect optical performance and low cost. Moreconcerns are put on the study of poly crystalline silicon thin films. Therefore, how toprepare high quality polycrystalline silicon thin films are of great significance.In this thesis, the amorphous silicon thin-films are deposited by PECVD, andthen obtain poly crystalline silicon thin-films by RTP. The influence of differentdeposition parameters and annealing parameters on amorphous silicon thin-films iswell studied.Firstly, the effect of annealing time and temperature on composition and structureof amorphous silicon thin-films was examined in this paper. The relationship betweenthe contain of H ,annealing time and annealing temperature was investigated , and alsothe variation of thin films crystallization with annealing time and annealingtemperature was given in the paper.Secondly, poly crystalline silicon thin films with different crystal volume fractionwere made, the influence of single-step and gradual-step on morphology and structureof thin films was studied. Poly crystalline silicon thin films by gradual-step annealingdeserved smoother surface with low defect density and micro-holes.Lastly, the variation of deposited rate and crystallization with depositionparameters (depositing temperature, saline concentration, glow power and substratematerials) was discussed in the thesis. The reason of the variation also was analyzed. Based on these results, the best deposition parameters for polycrystalline silicon thinfilms were also put forward.