| With the feature of high-speed, high-capacity, non-volatile and high reliability,Flash memory has been gradually used in aerospace electronic systems in recent years.Variety of high-energy particles in space will cause radiation effects on electroniccomponents, including Flash memory. Total ionizing dose(TID) effects is one of themost important problems for Flash memory in space applications, so it has greatsignificance to study the TID effect on Flash memory.At first, the impact of TID effects on MOS device’s electrical parameters andperformance is analyzed by study the mechanism of TID effects in MOS devices. Then,combined with the circuit structure and working principle, the paper study the sensitiveunits and sensitive parameters of NOR Flash memory, get that the storage unit andcharge pump are sensitive units in this kind of component. The experimental scheme ofTID effect on Flash Memory is formulated and a TID experiment system is developedfor device AM29LV160D after the research on standard and papers of TID effectexperiment. During TID experiment, the dynamic biasd chip was damaged first, theerase time of chip severely degraded during the test and the programming functionsalways failed more quickly than the erase function.The result of experiment shows thatthe charge pump is the most sensitive unit of TID effect in Flash memory and two kindsof radiation-induced trapped charge in storage unit may be the important cause that theprogram function failed earlier than the erase functions, in addition, dynamic bias withthe charge pump turning on is the worst bias in TID experiment for Flash memory. |
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