Bending Properties And Total Ionizing Dose Effect Of TiO₂ NRAs Based Resistive Switching Cell

Flexible electronic devices have wide application prospects in the field of information,energy,medical and aerospace field for its unique ductility,lightweight and low cost.Flexible memory devices are the bottleneck in the development of flexible electronic integrated systems.Resistive switching memory has simple sandwich structure of metal-insulating layer or semiconductor layer-metal,which are realized on flexible substrate easily.The binary metal oxide resistive switching memory exhibits excellent resistive switching properties and radiation tolerant ability,which meets the development requirements of flexible memory and space appliacation.However,some problems need further studied.For example,how to improve the bending characteristics of resistive switching memory,and what is the effect of radiation on the resistive switching properties under bending.In this paper,the TiO₂ nanorod array?NRAs?is used as the resistive functional layer to develop flexible resistive switching memory,in which the spacing between the nanorods is used to bear deformation induced by bending,and the total ionizing dose effect of TiO₂ NRAs based resistive switching cell were studied.The main research contents and results are as follows:?1?TiO₂ nanorod arrays are grown on a flexible Tisubstrate by hydrothermal method,the crystal structure and geometric configuration of the nanorod arrays are adjusted by changing the growth process parameters,and the resistive switching characteristics are also characterized.The results show that the Pt/TiO₂ NRAs/Tihas a good bipolar resistive switching behavior,where the TiO₂ NRAs with a polycrystalline rutile structure and with a diameter of about 90 nm were prepared from TiCl₃ on a seed layer.Pt/TiO₂ NRAs/Tishows a low operating voltage of below 3 V,high ON/OFF ratio of above 10²,good retention for more than 10⁵ s,good endurance of 10⁷cycles,and good thermal stability of the high resistance and low resistance state at 85?during the retention and fatigue tests.The presence of non-lattice oxygen in the function layer indicates the oxygen vacancy conductive filaments dominants the resisitive switching of the device.?2?The effects of different bending radius and cycle bending times on the resistive characteristics of Pt/TiO₂ NRAs/Timemory cells are studied.The results show that the resistance to bending of the Pt/TiO₂ NRAs/Timemory cells is more better than the TiO₂film.With the decrease of the bending radius,the operating voltage of the Pt/TiO₂NRAs/Tiresistive memory cell increase slightly and the high and low resistance states remain stable,but the cyclic bending affects the high and low resistance states of the resistive memory cell definitely.SEM characterization results show that the nanorod array has few cracks under the same bending state,which is the reason why the bending has little effect on the nanorod array.?3?The effect of total dose effect using ⁶⁰Co?-ray on the resistive switching cell under bending conditions is studied.The results show that when the bending radius is larger than 7.5 mm,the resistive switching properties remain good under irradiation of1 Mrad?Si?⁶⁰Co?-ray,but when the bending radius is reduced to 5 mm,the operating voltage of the storage element is significantly reduced,the resistance of the high and low resistance states are significantly reduced.The generation of oxygen vacancies after irradiation is considered to be the main cause of memory cell damage.