Research On Total Ionizing Dose Effects Of SRAM

In recent years, the demand of radiation hardened integrated circuits is constantlyincreasing as the rapid development of China’s aerospace industry. As importantcomponents in integrated circuits, the long-term use of memories is prone to totalionizing dose effects in space. SRAM are widely used not only as one of the basicmemories, but also as cache and register stack embedded in core devices such asmicroprocessors. Therefore, the radiation resistance properties of SRAM determine thestability of control system circuits in spacecrafts and satellites, it is necessary for thestudy on total ionizing dose effects of SRAM.The content of this thesis was organized as follows. From the perspective of siliconmaterial which is most commonly used in the semiconductor devices, researchingradiation damage mechanism and effects in SiO2oxide layer. Starting from the MOStransistor structures and functions, research the effects on total ionizing dose in theMOS transistors. Analyzing sensitive units combined the structures and functions ofSRAM circuits. Drawing a conclusion that the sensitive units on total ionizing doseeffects are memory array and sense amplifier. The worst bias for SRAM failure underthe irradiation is static bias. Designing test plan and test system for total ionizing doseeffects test of SRAM. The experiment shows that static bias is the worst bias in the totaldose effect of SRAM.