Study On The Application Of Transparent Conductiove Oxide Film In AIGaInP-based LED

LED(Lighting Emitting Diode) has become one of the most growth potential newgeneration lighting source of21st century, owing to its low energy consumption, longlife, green environmental protection.As the development of fabricating tech of III-Vcompound semiconductor devices, the research of LED chips tends to high effect andhigh brightness. The application of current extension layer can significantly improveLED external quantum efficiency.It has been an important method to improve theperformance of LED devices. Based on AlGalnP-based LED, this thesis studied theapplication of ITO film as the current expansion layer in the LED.Through experiment and analysis, this thesis has studied the affections to thequality of thin film caused by conditions of E-beam evaporation, showed that thecompactness of the thin film will be improved with the increase of growth rate, buttransmittance of the thin film will be decreased. After completion of evaporation, ITOthin film photovoltaic properties have been improved by heat treatment and therefractive index increases.The result shows that the application of ITO has made the LED device of opticalpower increased by35.8%, and reduced the wavelength red shift. The thesiscomprehensively analyzed that the function of ITO film as Anti-reflect film in LEDand the rise of ITO thin film refractive index by the heat treatment, so we optimize theITO film thickness, improve the luminous efficiency of LED.