Study On The Preparation Of Mg₂Ge Semiconductor Film By Resistance Thermal Evaporation

Mg₂Ge semiconductor material is a new environmental protection material,Mg₂Ge is a high-performance thermoelectric material with high Seebeck coefficient,high conductivity and low thermal conductivity.Mg₂Ge has great application value as anode material of lithium ion battery.Mg₂Ge has the advantages of high hardness,corrosion resistance and high temperature resistance.It is a potential metal matrix composite.In this paper,the preparation technology of Mg₂Ge semiconductor films by resistance thermal evaporation and magnetron sputtering is studied systematically,and the appropriate heat treatment conditions and sputtering parameters are determined.The Mg₂Ge semiconductor films on Ge?quartz glass and sapphire substrates are prepared by magnetron sputtering method.The growth of films under different linings are studied.Single phase semiconductor Mg₂Ge films were successfully grown on Ge and quartz glass substrates.The films are characterized by X-ray diffraction?XRD?,field emission scanning electron microscopy?FESEM?and Raman spectroscopy.The effects of annealing conditions on the crystal structure and surface morphology of Mg₂Ge films are analyzed.The optimum annealing conditions for the growth of Mg₂Ge films are determined,i.e.the annealing temperature is 400?and the annealing time is 5 h.The effects of sputtering parameters on the crystal structure and surface morphology of Mg₂Ge thin films are analyzed.The sputtering process parameters of Mg₂Ge films grown on Ge substrates were determined,namely,the sputtering power is 90 W?the sputtering pressure is 3 Pa and the argon flow rate is 20 sccm.The effects of annealing temperature on the crystal structure and surface morphology of Mg₂Ge thin films deposited by magnetron sputtering on quartz glass and sapphire substrates are analyzed.The optimum annealing conditions of Mg₂Ge films grown on quartz glass and sapphire substrates were determined to be 400?for5 h.Finally,the Mg₂Ge films prepared by resistive thermal evaporation and magnetron sputtering are characterized and analyzed by micro confocal raman spectrometer.The results show that there are two raman active peaks near 248 and550 cm^-1,which is consistent with the Mg₂Ge raman characteristic peak sites.