The Study Of CIO Film Prepared By Vacuum Evaporation-oxidation

CIO (CdIn2O4) film is an n-type wide-bands have been widely used for civilian and military fields. Its most representative use is being used for the preparation of transparent electrode in industry. At present, the CIO films can be prepared by many methods and one of them is coating by vacuum evaporation-oxidation method. A deeper research is done on the fabrication technique and optoelectronic character of the CIO thin film prepared by vacuum evaporation-oxidation method in this paper. And it is based on the recent research and development of the CIO film both at home and aboard, with the method of combining theory and experiment. Experimental results show that good quality CIO thin films can be prepared by this technique. This technique has lots of advantages, such as low cost, easy to operation. The CIO thin film is prepared by vacuum evaporation utilized the on the DM-300B vacuum evaporation coating machine, and is analyzed by the X-ray diffraction, scanning electron microscope. Results show that the film prepared by vacuum evaporation technique is polycrystalline structure and its ingredient is CIO, In2O3and CdO. Meanwhile, the Hall effect testing instrument (ACCENT-5500) is utilized to analyze the thin film resistivity, carrier concentration and Hall mobility under different conditions. The UV-visible spectrophotometer (UV-3600) is also used to analyze the optical performance of the thin film prepared by different growth conditions. The result shows that the conductivity and transparency of the film is improved as the increase of the oxidation temperature and oxidation time. Based on the experimental data of the CIO films, the best growth conditions for this paper is as bellows:gas pressure (2×10-3Pa), heating current (50A), eating time (20min), oxygen flow (160ml/min), oxidation time (1h), oxidation temperature (700℃). The film properties of the CIO films prepared under the growth conditions mentioned above are resistance rate (0.012Ω.cm), Hall migration rate (3.47cm2/V.S), carrier concentration (1.50×1020cm-3)and transparency (90%) under the wavelength of760nm. Obviously, the film formed by this technique has good photoelectric performance.