Investigation Of Basic Properties Of High Quality Cu Doped Ga₂O₃Films

The Ga2O3film has become the hotspot of semiconductor materials as a direct broadband gap semiconductor materials along with the development of semiconductor photoelectric tec-hnology. It mainly includes a-Ga2O3and β-Ga2O3. The β-Ga2O3has good thermal stability and chemical stability.The Optical band gap is generally between4.2-4.9eV depending on the pr-eparation conditions. It was applied to high temperature oxygen sensors, LCD flat panel disp-lays,ultraviolet detector, the transparent electrodes of light device.etc. With the improvement of doping technology, the doping research in the β-Ga2O3film has attracted more and more researchers’attentions.This paper based on this background,the β-Ga2O3film prepared by electron evaporation technical,analyzed for its crystal structure and optical properties as well as the influence as well as the influence of the annealing conditions.the study is mainly divided into the follow-ing two parts:1.The study about the lattice structure optical properties,as well as external morphology characterization of three β-Ga2O3:Cu thin films samples in different annealing condition.To the analysis of XRD,the crystallinity quality of the samples annealing in oxygen and nitrogen atmosphere was greatly enhanced,and the lattice preferred orientation is (201) and (301);the visible UV-VIS transmission spectra analysis of three samples showed that the film’s transmission rate increases after annealing.in the infrared and ultraviolet region,the transmittance of the film annealing in N2is higher than the samples annealing in O2.on the contrary,the transmittance of annealing in02is higher than the sample annealing in N2in the visible region of400nm-760nm.the AFM analysis showed that the surface of the unannealed Cu-doped Ga2O3films is basic formation,the roughness is3.14nm,the grain is small,There are quantum effects, leading to the unannealed XRD diffraction peak is not obvious.2.The study is about the influence of the annealing temperature and time to the crystall- inity quality and optical properties of the Cu-doped Ga2O3film.To the analysis of XRD,the β-Ga2O3:Cu film have a good crystal quality after annealing at900℃in60min.the loss of transmission light of the films includes two major parts:The film srface scattering and crystalline quality;The grain size in the film is changed with the increase of annealing temper-ature and time,resulting in the β-Ga2O3:Cu film’optical bandgap occurs red shift phenomenon.