Heavily Doped Si Film Prepared By Electron Beam Evaporation And Its Application

Si material, one of the most important semiconductor materials, is generally used inmicroelectronics industry. Meanwhile, Si films are mostly studied in the solar industry but others.Right now, the building lost its energy more than half throw its glass, which is proliferation intoday’s buildings, high in radiation rate and poor in insulation. Therefore, controlling the energyconsumption of glass is very beneficial to conserve energy, where Low-e glass is the best choice.Currently, there are two kinds of Low-e glass, online Low-e and offline Low-e, categorized bymanufacturing method. However, both kinds of them are too expensive now that can only be usedin office buildings and shopping malls, not every households. Thus, low-cost Low-e glass is takenaccount by us. One of the common methods is magnetron sputtering, whose equipment is expensiveand, consequently, the price is high. The other method is vacuum evaporation. Yet, this method isgenerally adopted to produce double membrane and no improvement report recently. In thiscircumstance, this research is planning to try e-beam evaporation deposition of heavily dopedsilicon film to produce film with low-E properties only by Si.By films’crystallization, doping and other technology, we can improve the heavily dopedsilicon film electrical properties, or just use to prepare the Si and Ag Low-e film. In this method,gas is berried, cost is decreased and process is reduced. The research explores the Si protective filmdeeply and provides reference in certain grade.Main conclusions of the paper are: (1) heavily doped silicon film produced by e-beamevaporation method conducts electricity poorly and needs to be further improved. (2) Four-pointprobe, X-ray diffraction (XRD), SEM, EDS and other films were characterized by means ofcharacterization. (3) Al-induced low-temperature crystallization method is used to realize the lowtemperature crystallization for Si films. Through the analysis of transmission spectroscopy andXRD, crystallized transmission rate is improved significantly and conductivity has increaseddramatically.(4) Using phenomena discovered in experiment, I have prepared Al-doped silicon film,which is showed in the test good conductivity, visible light transmittance and certain heat reflectiveproperties.(5)I prepared Low-e film which is based on Si and Ag, and has good performance. The Siprotective layer can play a protective role. (6) This paper studies the metal anti-corrosion ability ofSi layer. I have deposited Cu and Al films and proved that the Si layer effects metal anti-corrosionperfectly, under the condition that Si film does not affect the transmission rate of the metal film.