Research And Fabrication Of4H-SiC MESFET UV Detector

Wide bandgap, high thermal stability, high thermal conductivity, high carrierssaturation rate and strong anti-radiation ability,Silicon Carbide is a material ofoutstanding properties.A better anti-radiation ability compares to other semiconductormaterials such as Si,Ge,GaAs,InP etc and a lower atomic number and backscatter rate toGaN make SiC the preferred material to make UV detector.What’s more,SiC willcompatible with silicon process,with a rather small leakage current.In this papers,the basic princiles of UV detectors in MESFET structrue wasdiscussed.According to these princiles, several important structure parameters weredetermined.Layouts of the devices were demonstrated, followed by the process offabricaton studied: ion implantation will be used to help the formation of ohmiccontact; multilayer matal will be adopted as the ohmic contact; every device will beinsulated from each other by ICP mesa etching; a semitransparent Au thin film will beused to aquire a good schottky contact.