Research On The Performance Of A Photovoltaic InSb Infrared Focal Plane Detector

In recent years, Infrared focal plane detectors are widely used in aerospace, infrared remote sensing, national defense, environment, medical science and scientific instrument and so on. Being one of the most important middle wave detectors, relevant researchers have paid more attention on studying In Sb Infrared focal plane detectors. To a great extent, its development improves the performance of the whole infrared system. Because of the small dark current and the lower energy consumption, the photovoltaic In Sb Infrared focal plane detectors are widely used. Although a lot of researches on the performance of the photovoltaic In Sb infrared focal plane detectors are done, there are few researches on its internal mechanism. So it is of great value to understand the internal mechanism and explore the new structure of the detector.In this article, we mainly study the internal mechanism of an In Sb infrared focal plane detector. On the basis of mechanism analysis of the traditional structure, the primary research on the new structure of the detector has been done. The main work done in this paper is as follows:First, based on semiconductor simulation platform, the performance of photovoltaic In Sb infrared focal plane detector are studied, including the effects of structure parameters, such as pixel size, pixel pitch, mesa height and buffer layer thickness, the doping concentration and p-n junction depth on the quantum efficiency(QE) and crosstalk(CT) of the photovoltaic In Sb infrared focal plane detector. The electric field distribution, as well as the recombination rate, changes with the structure parameters and p-n junction depth, and their relationships are analyzed. The results show that the structure parameters and the depth of a p-n junction have a profound effect on the inherent physical mechanisms of the QE and the CT. And it is of great importance to the optimization of a photovoltaic In Sb infrared focal plane detector.Second, based on the simulation analysis of the photovoltaic In Sb infrared focal plane detector traditional structure, a new structure of In Sb infrared focal plane detector is proposed. Compared with the traditional structure, the results show that the performance of the new structure is superior to the performance of the traditional structure. At the same time, the transient response of the detector is also studied, including the effect of the doping concentration, the carrier lifetime, and the carrier mobility on the output response of detector.