| This paper describes the design of S-C band ultra-wideband microwave power amplifier. The research progress of the current broadband amplifier is introduced in this paper, Variety of design parameters and indicators of RF amplifier also is introduced。 Several common methods to achieve broadband amplifier is introduced and analyzed. Finally, a3-8GHz30W ultra-wideband microwave power amplifier is designed.First of all, The domestic and foreign research progress and results of broadband power amplifier is summarized by access to relevant information papers. The significance of broadband power amplifier is understood by access to relevant information papers. By summarizing previous works, the present and future of broadband amplifiers is analyzed.Secondly, this part introduces the main categories of RF power amplifiers and amplifier characteristics of each class.The RF amplifier design specifications and parameters are simple introduced in this part, also the relationship between various indicators and design principles is analyzed. The principles of matching and different methods to achieve impedance matching are analyzed through a brief introduction to some knowledge of impedance matching. Microstrip theory which usually use in RF amplifier design is introduced and analyzed. In the end of this part, some points to note are proposed while Use microstrip circuit design.Third, by summarizing to the relevant literature, several methods of broadband power amplifier are Summarized and analyzed for each of them.The design suitable for this article is got by comparing various broadband matching method.Finally, A S-C band amplifier is got which output power up to30W. Amplifier chip is modeled by ADS. In the same time, the bonding wire model is simulated by HFSS. Taper microstrip is used for broadband matching in this article. After simulating the design by ADS, Material object is processed and tested. The test Results has compared and analyzed with simulation.A3-8GHz30W broadband amplifier is designed by ADS using Triqunint company GaN HEMT products TGF2023-20. The power amplifier model we using in design is established by our team. Bonding wires are designed to connect the amplifier chip and external matching circuit. Taper microstrip is used for broadband matching in this article. Taking into account the efficiency and linearity, broadband amplifier is designed to work in class AB. Test results show Gain of6±1dB in the frequency range of3-8GHz. |
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