Study Of Ultra Wide Band Microwave Solid-state Power Amplifier

This thesis describes the design of S-C band ultra-wideband microwave power amplifier based on GaN HEMT. The current broadband amplifier and design parameters and indicators of RF amplifier are introduced. The approachs of designing broadband amplifier is inductive and summaried. A power supply that is opened by order is made. Two driver of power amplifier at the frequency of 3-8GHz and A power amplifer at the end at the frequency of 3-8GHz are made. The maximum output power of the two-driver is 38.5dBm and the output power of the power amplier at the end is 30 W.Firstly, this thesis researches the achievements and progresses of the broadband power amplifier for nearly 20 years at home and abroad. It is very important to study the broadband power amplifer. It is analyzed to the current study of the broadband power amplifier. The conclusion is geted by the trend of the research the development.Then, the classification of RF power amplifier and the respective characteristics and the design parameters and indicators of RF amplifier are introduced and analyzed. The details is payed more attentions at the progress of designing. It is emphasized the ?zero? capacity and designed by a novel negative feedback circuit structure based on GaN HEMT. It is to pay attention to problems of the microstrip lines at the matching circuit. The datails of the shield boxes should be pay attention. The designing for projects must be processed. It is to understand the progress of the micro-electronics assembly at the beginning of designing.Lastly, this thesis design three 3-8GHz broadband power amplifier module. The driver stage?s maximum output power is 38.5dBm and the power amplifer?s output power is 30 W. Amplifier chip is modeled by ADS. In the same time, the bonding wire models are simulated by HFSS and ADS. This paper manufactures the power modules, tests the S parameters of the output power and analyzes the measured and simulated datas of modules.This thesis using Triqunint company products TGF2023-20 and TGF2023-02 based GaN HEMT. The driver is designed by TGF2023-02. The models of the chips that used in design is established by our team. Bonding wires are used to connect the amplifier chip and external matching circuit. Both of broadband amplifiers are designed to work in class AB. the results show output power of 30 W at the frequency of 3-8GHz. The test result with broadband and high output power is rare at home and abroad.