Real-time Measurement And Control Of Chip Temperature During The Aging Process Of Power VDMOS And IGBT Switches

With the continuous development of power semiconductor devices and the advancement of electronic power technology,its reliability has always been the focus of attention in the field of electronic science and technology.The power cycle test uses scientific assumptions and failure models to obtain the reliability information of the device under test by applying an accelerated aging environment that exceeds normal stress levels.In the power cycle test,changing the operating temperature of the device by increasing stress is one of the commonly used methods.Since high-power electronic devices such as VDMOS and IGBT usually work under a large current,voltage or power,such working conditions often cause semiconductor devices to generate excessively high temperatures during operation.According to the Arrhenius model,for every 10℃ increase in device temperature,the life of the device decreases by approximately half.Therefore,real-time measurement and control of the junction temperature is particularly important in the power cycle test.At present,the problem of the commonly used junction temperature measurement method in power cycle test is that the junction temperature is only obtained when the device under test is in the cooling process.The lack of real-time junction temperature measurement of the device during the heating process,which will cause us to be unable to real-time monitor the complete junction temperature change of the device in actual work.Therefore,it is not reliable to use the small current method to measure temperature for the power cycle test.Therefore,it is necessary to develop a method and corresponding equipment which can measure and control the junction temperature in real-time when the power device is turned on or off.This thesis mainly completed the following research contents:1.According to the research background of the real-time measurement technology of junction temperature in the power cycle test,the shortcomings of the commonly used test methods at home and abroad are pointed out,and the improvement methods and innovations of this subject are proposed in response to these shortcomings.2.Proposing the design plan of the power cycle test equipment,including the principle of junction temperature measurement,the use of Biharmonic interpolation algorithm to establish a complete temperature calibration curve of the device,the specific design plan of the power cycle test equipment,and the establishment of a threedimensional temperature calibration curve library for VDMOS and IGBT devices.3.Explaining the design of the hardware circuit of the power cycle test equipment,including the overall design idea,the construction of the power cycle test platform,the design of the gate voltage module circuit,the power module circuit,the test module circuit,the voltage acquisition module circuit,the FPGA control board and drive circuit,and the PCB production part.4.Describing the software design of the power cycle test equipment,including the overall design ideas,FPGA control and communication system design,and host computer software design.5.Displaying the test results of the power cycle test equipment developed by this thesis,analyzing the test results in conjunction with technical indicators,verifying and analyzing the accuracy of the test equipment,and explained the improvement of the equipment in the future development.6.Summarizing the research contents and results of this thesis,analyzing and forecasting the technology of power cycle test and real-time measurement of junction temperature.