The Structure Design And Simulation Of Al-Free Quantum Well Lasers Emitting At808nm

For the lasers with symmetrical waveguide, the photon absorption of the non-active region material is proportional to the doping concentration of material, which causes serious absorption loss. In order to solve this problem, we designed a kind of asymmetrical waveguide structure, which deviates the optical field from the p-type material, to reduce proportion the distribution of optical field pattern overlap with the high doping p-type material, and that can reduce photon absorption loss.We used the LASTIP software to design the structure of Al-free quantum well laser emitting at808nm. Employing separate confinement heterostructure SQW structure, and carried on the theoretical calculation to component of material (In1-xGaxAsyP1-y), and the width of quantum well. We also maked theoretical analysis and design to the component and thickness of the waveguide layer and the doping level of cladding layer. Then we maked a contrastive simulation analysis to the structures between symmetric waveguide and asymmetric ones. Finally we maked sure that the component of Ga is0.86and the As’s is0.75in the active layer, the width of the quantum well is8.5nm, and obtained the quantum well laser whose wall-plug efficiency is78%, internal loss αi; is0.8cm-1.