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The Study On Thin Film Of980nm Semiconductor Laser

Posted on:2014-01-29Degree:MasterType:Thesis
Country:ChinaCandidate:L LiuFull Text:PDF
GTID:2268330425993245Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
Because of the small size,long life,etc.of the semiconductor laser,which are widely used for laser pump sources,military,industrial,livelihood and other fields in recent years.But the low damage threshold of thin film limited the development of semiconductor laser.We simply described the theory of semiconductor laser.In order to solve the problem of low damage threshold of thin film,front cavity surface using Al2O3single-layer antireflection coating,after the cavity surface using TiO2and SiO2combination of the multilayered medium high-reflectivity film system,then optimized the department of electric field intensity distribution of the membrane,make the electric field intensity of high refractive index material reduced,effectively improve the output power of semiconductor laser and damage threshold.At last compared the optimized design and no optimized design coating of980nm LD and analyzed the P-I curve,the optical power,threshold electric current,the slope efficiency, analysis coating whether can improve damage threshold.The results show that the optimized membrane system can effectively improve the output power and obtain higher gain of semiconductor laser.
Keywords/Search Tags:semiconductor laser, increase permeation film, high-reflectivity film
PDF Full Text Request
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