The Design And Preparation Of 850nm High-Luminance Semiconductor Laser Cavity Facet Film

The 850nm high-luminance semiconductor laser is takes the resonant cavity by the AlGaAs crystal (110) natural cleavage plane. In order to obtain the high gain, reduces the threshold value electric current, enhances the quantum efficiency and the laser output, before the design the end surface plates the anti-reflection film, the after end plates the system high reflection membrane. Uses absorbs slightly, scatters the few membrane material combination to pile as multi-layered medium high reflection film, causes the back cavity surface index of reflection is 97%, the front cavity surface transmissibility achieves 3.2%. After the coatings, the component outside differential quantum efficiency enhances from 49.8% to 89.76%, the power efficiency enhances from 25.6% to 40.2%. The maximum output power achieves 3.6W, has not compared with the coating component enhanced 2.5-3.1 times. At the same time, the film protects the component end surface from oxygen and water in the air.The present paper semiconductor laser adopts the big cavity structure, pours into the transparent window structure and the superficial deactivation technology without the electric current. Improved optics cataclysm damage threshold value (COD) and the radiation which the high luminance semiconductor laser easy to appear and so on the key question.The film is coated by Denton Integrity-36 vacuum deposition equipment associated with ion beam aid system. The spectrum curve is tested by spectrometer and the layer structure is analysed by ellipsometer.