The Fabrication Of NiO Thin Films And Its Doping Techniques

NiO is a binary wide band gap of the transparent oxide semiconductor film, the NiO film band gap for3.6-4.0eV at room temperature. Although the NiO films and gap is larger than current transparent ZnO films, still can not achieved the detection of "solar blind ". In order to change the NiO band gap, we will make the appropriate doping, so that the NiO films band gap close to the solar blind band4.43eV (4.43eV-280nm). Hence, in this letter, we demonstrate NiO films by using RF-magnetron sputtering method, and then the NiO films doped by selecting the appropriate element, so that its band gap is located in the " solar blind " band " solar blind, to provides support for the "solar blind" unltraviolet detector. The work of this paper is mainly as follows:(1)The undoped NiO Films are mainly by RF-magnetron sputtering directly prepared and reacted prepared NiO films, and their structural properties, optical properties, the optical band gap and electrical characteristics.(2) Through theoretical analysis, select the Mg element doped, expect band extends toward the solar blind, and the structural properties, optical properties, the optical band gap and electrical characteristics of MgNiO films.