Study On Of Mg Doped Ga₂O₃ Thin Films Preparared By RF Magnetron Sputtering

In this paper,Mg doped Ga₂O₃ films were prepared by RF magnetron sputtering.We study the effects of two doping methods on the properties of thin films,double-target alternating sputtering and direct sputtering of mixed target materials.After that,we used mixed target materials to prepare Mg doped Ga₂O₃ films under different sputtering conditions.And we took one of the samples back to fire,using XRD,UV-Vis,AFM,SEM,EDS and PL and other test instruments to characterize the film samples,in order to study sputtering power,sputtering pressure,sputtering time and other sputtering parameters,as well as annealing treatment on the properties of the film.The results of SEM and EDS show that there are some problems,such as uneven surface of doped film,low compactness and low contrast between grain and substrate,so that the doped film can be prepared by direct sputtering of mixed target material in order to obtain better quality doped film.The results of XRD show that when the sputtering power is 80W and the sputtering pressure is 0.8Pa,the crystallization quality of the film is the best,the light transmittance rate is the highest,and the band gap width is smaller.The results of UV show that the sputtering pressure has not a great effect on the light transmittance of the film.When the sputtering time is 1.0h,the film light transmittance is higher and the film quality is better.XRD results show that the crystal structure of Mg doped Ga₂O₃ thin film after annealing is enhanced,and the crystallization quality is improved.And the weight percentage of Mg element increased after annealing.After annealing,the light transmittance of thin films increased from 80%to more than 90%.The film band gap width increases.In addition,the Photoluminescence peak of the film increased obviously after annealing,which indicates that annealing treatment has a significant effect on the luminescence characteristics of the film.