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The Research Of Preparating NixMg1-xO Films

Posted on:2015-01-20Degree:MasterType:Thesis
Country:ChinaCandidate:Y SunFull Text:PDF
GTID:2268330425493675Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The NiO film band gap for3.6-4.0eV at room temperature. Although the NiO films and gap is larger than current transparent ZnO films, still can not achieved the detection of " solar blind ". In order to change the NiO band gap, we will make the appropriate doping, so that the NiO films band gap close to the solar blind band4.43eV. Hence, in this letter, we demonstrate NiO films by using magnetron sputtering method, and then the NiO films doped by selecting the appropriate element, so that its band gap is located in the " solar blind " band " solar blind. The work of this paper is mainly as follows:(1) The undoped NiO Films are mainly by RF-magnetron sputtering directly prepared and reacted prepared NiO films, and their structural properties, transmitted spectrum and the optical band gap.(2) Through theoretical analysis, select the Mg element doped, expect band extends toward the solar blind, and the structural properties, the grain size and the optical band gap of MgNiO films.
Keywords/Search Tags:NiO films, Magnetron sputtering, Solar-blind unltraviolet detector, Bandgap, MgxNi1-xO films
PDF Full Text Request
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