Investigation On Raman And Photoluminescence Properties Of ZnO:Sb Thin Films Deposited By Magnetron Sputtering

Zinc oxide is a II-VI compound semiconductor oxide material with direct wide bandgap of about3.37eV at room temperature and exciton binding energy is60meV, Theorectically it was to be achieve stimulated emission efficiently.Its excellence photoelectrical perfromances makes potentially application in light-emitting diodes,laser diodes,untraviolet detector fields and so forth. Sb atoms could give rise to impurity energy levels in band gap of ZnO,inearasing non-radiation defects center,influencing luminescence efficiency of ZnO materials,so which were provide in making a choise of ZnO luminescence materials in application at visible ranges. But now investigation of physics properties of Sb doping ZnO thin films are fewer, structrues and optical performance of Sb doping ZnO thin films were investigated on Sb doping content by RF magentron sputtering method, defeces luminescence mechanisms of ZnO and the possibility of exploiting visable wavelength luminescence devices were discussed.In our paper,different doping content ZnO:Sb thin films were deposited at glass substratures by RF magentron sputtering methods.structrues and optical performance was investigated by X-ray diffraction(XRD),Raman scattering spectroscopy (Ramam),UV-vis spectrophotometer(UV-vis),Room photoluminescence spectra (RT-PL).All the samples were found to be hexagonal with wurtzite arrangement by XRD and Raman,when Sb doping was lwt.%,the crystallinity of the sample was best.Sb was a majar substitution in ZnO crystal lattice with different doping content ZnO:Sb thin films by XRD, simultaneity the Local Vibration Modes of Sbzn-O is localed at532cm-1by Ramam,Transmittiance spectra and PL spectra indicated that the bandgap of ZnO:Sb thin films was decrease with increase of Sb doping content.the uvtraviolet peak localed at3.25eV is correlation of excitonic recombination,a violet peak(3.03eV) was relation to zinc vacancy,and the green band(2.10-2.44eV) were attributed to oxygen vacancy or zinc interstitial,but when Sb doping was lwt.%and5wt.%,an additional violet peak(3.11eV) was only occurred in Sb-doped ZnO thin films,the violet peak was relation to Sbzn complex, when Sb doping was lwt.%,the intensity of the new peak was best.but Sb doping was5wt.%, the intensity of the new peak was decrease, we concluded abundances of Sb atoms entered into crystal boundareies.