The Design Of A Charge Sensitive Preamplifier Used For MicroMegas Detector

With the continuous development of high energy physics， particle detector islimited on position resolution，counting rate recently years. In the situation，a numberof new gas detectors are developing rapidly， especially GEM detector andMicroMegas detector.The upgrade of the Beijing Synchrotron Radiation Facility(BSRF) demandstwo-dimensional position sensitive detectors with high performance on counting rate，position resolution. MicroMegas detector is a high precision position sensitivedetector, and can work in the environment of high counting rate, which meeting theactual demands of the BSRF will have a good prospect of applying in synchrotronradiation experiments. MicroMegas detector has Two-dimensional strip readoutsolution, because of the high position resolution, the size and space of the micro-stripis extremely small, only a few hundreds micron,so that the number of front-endreadout channels is increasing greatly. The limitations of the traditional electronicshas been unable to satisfy the requirements of the new detector, the development ofhighly integrated ASIC will be the inevitable trend of the front-end readoutelectronics of detectors.In this thesis, due to the actual demand, design a front-end readout ASIC chipused in MicroMegas detector. Firstly expound the demands to detectors andelectronics of BSRF, and then introduce the structure of MicroMegas detector,solution of readout and the characteristics of output signal. Next make sure the wholestructure of circuit by combining the traditional nuclear electronic and learning somemature and excellent front-end readout ASIC chip of detectors at home and abroad.After that introduce the specific realization of the process of the circuit of eachmodule in detail, and give the key parameters and results of the circuit. Finally,complete the layout of the schematic.Chip based on Chartered0.35μm CMOS process，is integrated four-channel. Thesimulation results show that the adjustment of gain in the chip can be suitable fordifferent ranges of input charge, and in the choice of conversion gain4.65mV/fC，range of input charge0to350fC, integral nonlinearity is1.04%. the equivalent inputnoise charge, under different conversion gains, is always less than2500e-, which reaches the design goal.