The Structure Design And Simulation Of1.47μm Semiconductor Laser

1.47μm is a common semiconductor laser wavelength, it’s primarily used in the field of optical communications, later it further expand into the field of security technology, medical, communications, bio-engineering, and spectral analysis. This paper mainly discussed the materials and device structures of1.47μm semiconductor lasers. As well as discussed the department of the InGaAsP/InP material, and get suitable strain and width wells, barrier width, the number of quantum wells by the strained quantum well theory and the device structures theory. This paper designed the cavity length of the laser, SCH structure, and the waveguide layer through the material threshold, the temperature characteristics and the electrical characteristics etc.The semiconductor laser is very sensitive to temperature changes, and thus the temperature characteristic of the semiconductor laser is a very important property. This paper did some analysis on our designed laser through the temperature-related simulation by the simulation software lastip. As well as this paper simulated and analysised the influence of temperature on the density of the laser current, the threshold current, power and wavelength. In order to further improve the temperature characteristics of the device, this paper designed a TI structure laser and conducted a detailed comparison with the previous ordinary MQW. Through a series of simulation and analysis shows that the TI laser was very excellent, especially the the TI structure can greatly improved laser’s temperature characteristics.