Study On The Array And Semiconductor Power Amplification Laser Of InGaAsP/InP

To study a semiconductor power amplification laser(LD-SLA) the thesis commence its work from physics of the semiconductor ,laser theory and theory of optical amplifier .The concrete scheme is as follows: The gain-guide and oxide-stripe LD epitaxial wafer of InGaAsP/InP is grown on InP substrate by the method of molecular beam epitaxy ,then split it up into LD and SLA using photolithography and chemical corrosion ,then integrate them into one by direct coupling so as to has the out power been amplified an order. So the conclusion is that the traditional LD and array can be replaced by a kind of high power semiconductor power amplification laser and array which will reduce the quantity of tube core, improve the quality of laser, optimize the optical source system and cooling system so as to lower the costs and make the out power improve at double.There are also great prospects in pumping solid laser instrument with LD-SLA instead of traditional LD.