.ingaasp / Inp Quantum Well Laser Model

Semicoductor laser (LD) which is a current-driven device has gotten a drastic development since it was invented in 1960s. With new structures and materials emerging and continuous expanding of device functions, LD is applied for more and more domains extensively such as optical communication and access military affairs biology and so forth. So the valid application of LD is a worthy-researched subject that has important significance. Normally as for a system which is concerned with LD, the situation of LD has important impact upon the system function because of its nucleus status. So it is imperative to analysize the character of LD integrated with external driven circuit. Obviously structuring its circuit model is useful for its applications.InGaAsP long-wavelength quantum well laser is at present appied most extensively in optical fiber communication. Structuring its circuit model can optimize the design of the optical transmitter and it is significant to design high-qualitied optical communication system. Cycling around the circuit model of QW laser, main works done are mentioned as follow:1. Depicting InGaAsP quantum well layer epitaxy material measurement and device fabrication technology. The material MOCVD epitaxy needs to regulate some parameters including V/III and interval. Three measurements such as x-ray double diffractioner.. PL luminescence and ECV can ensure the layer epitaxy quality. In addition consequent fabrication technology like corrosion electrical pole and reflecting mirror also have critic impact on device operation function.2. Introducing several classical circuit models concerning LD such as below Ith LD double heterostructure LD and multimode LD. It can make a guide to consequent QW-LD's circuit model by acquainting some principles methods and techniques of structuring model.3. Illustrating some methods that can determine the important parameters of LD's rate equation explicitly. For instance, Carrier transportation behavior in three dimensions SCH region can affect the modulation character conspicuously. Quantum capture is a complicated process and capture time computation and experiment test are provided. It is difficult to ascertain carrier's transportation and distribution in multiply quantum wels and tunneling time and heating emitting time computations are also provided. Optical gain whose formula is complicated is a critical parameter and it is useful for structuring model to obtain a concise formula by means of experiment curve.4. Structuring three-level model on basis of two-level model .published before. The circuit model is simulated and some results are gotten by taking account into the same parameters. MQW-LD circuit model designed by GRossi is adopted to be illustrated by some solo subcircuits. So it is easy to regulate parameters to obtain results. In addition, circuit model of quantum cascade laser whose lattice matchs with InP has been structured and some valuable conclusions have been gotten..