1.06μm High Power Semiconductor Laser

High power semiconductor laser is the wide application of laser type, of which stimulated emission wavelength of1060nm semiconductor laser in the military field play an important role, such as laser guidance, laser tracking, laser ranging, laser radar, laser aiming and laser warning, can saying is on China’s military plays a large role.This article based on the width of the waveguide structure to increase the laser output power, at the same time reducing the optical catastrophic damage threshold. And through the simulation of laser structure in each layer thickness, component optimization, study the restriction factor, index, output power, threshold current and other important parameters, then we can get a full1060nm single quantum well semiconductor laser shock machine structure, namely QW thickness of0.007μm, waveguide layer thickness of1μm, including A1group is divided into0.15, cladding layer thickness is1.8μm, cladding layer thickness is3.2μm and A1of the component which is0.4.Finally the thesis to the design of laser structure optimization of process, the preparation of cavity length1mm, strip width100μ m laser crystal, and carries on the survey, get laser work current at about3.9A, the average power output can achieve2.85W, oblique efficiency is about0.88, series resistance is0.31Ω.