Research On X-band T/R Module Based On SiP Technology

The T/R module is one of the most important part of the whole radar system and itsperformance affects the performance of the whole radar system directly. The researchand manufacture of the T/R module with compact size and high performance willundoubtedly promote the development of radar technology. For the T/R module studiedbefore, the LTCC technology pushed forward the development of the T/R module.However, the LTCC technology cannot meet the higher and higher demand of the T/Rmodule by modern electronic products at present. The proposing of the SiP technologysatisfies the development tendency of the T/R module in the future. The T/R modulebased on the SiP technology with many advantages such as compact size, highperformance, and high reliability has wide application and bright future.In this thesis, the X-band T/R module based on the SiP technology is researched.Firstly, the significance of researches on the T/R module is demonstrated. Thedevelopment history of the SiP technology and domestic and overseas researches on theT/R module based on the SiP technology are introduced. Secondly, the layout andscheme of the proposed T/R module based on the SiP technology are discussed due toperformance requirements. The whole T/R module is divided into two paths: thetransmitting path and the receiving path. Using the multilayer substrates pressingtechnology, the transmitting path and the receiving path are on the different layer. Themultilayer transition is used for the transmission of microwave signal between differentlayers, while the metal via hole is used for the connections of biasing circuits, controlcircuits and grounding circuits. The transmit port, the receive port, the antenna port,power supply input points, logical control signal input points and grounding points aredesigned into a standard pin structure to be connected with outside circuits convenientlyand to achieve the packaging of the whole module. Then the processing of themultilayer substrates pressing technology and the embedded technology are introduced.In order to reducing the size of the T/R module, the embedded technology is utilizedand the biasing circuits are designed and embedded in the blank part beside or on theopposite layer of the microwave circuits. And next, the transitions of different transmission lines on one layer and between different layers and some passive devicesin the T/R module are simulated and some error analyses are showed. Finally, someexperimental structures are fabricated and measured, with good agreement between themeasured results and the simulated results. A CAD chart of the whole X-band T/Rmodule based on the SiP technology is demonstrated at the last part of this thesis.