Design Of A Drive Chip For IGBT Based On600V BCD Process

Taking advantages of GTR and MOSFET, IGBT has many characteristics, such ashigh switch speed, high breakdown voltage, large current and good thermal stability.Recently, IGBT is becoming a hot spot in the field of power electronics and thecorresponding IGBT drive circuit is widely studied.This subject is supported by National Science and Technology Key Project. Basedon1μm600V BCD process developed by CSMC and UESTC, a drive circuit for600VIGBT is successfully designed. The chip parameters and indicators include: themaximum floating bias voltage is600V, the maximum operation frequency is100KHz,the peak output current is1A and the dead time between two outputs is1.5μs. The chipcan be used under half bridge mode flexibly and the structure is also very simple.Firstly, this paper adopts double pulse level shift circuit to complete high-lowvoltage level displacement, thus reduces the power consumption of the system greatly.The whole circuit is divided into three modules, namely, logic control module, drivermodule and protect module. For each module of the circuit, by using Hspice, thedetailed analysis and design are described. The overall circuit is discussed under threeconditions: normal work, under-voltage and over-current.Secondly, in the process of layout design, the structure of C type and S type levelshifter are compared and analyzed. On the bias of these, a new junction termination andLDMOS layout structure is proposed. This makes the layout of high side reduced by12%.Finally, the chip testing is completed. According to the test results, the chip can beapplied under typical application platform and fit all of the design requirements.Now the samples have been passed on to Electronic Engineering Institute ofChinese Academy of Sciences. They have been successfully applied in the drive ofpower system of electric car which is produced by Beijing automotive group co., LTD.