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Study On Sub-millimeter Wave Multiplication Technology

Posted on:2014-03-29Degree:MasterType:Thesis
Country:ChinaCandidate:H LiFull Text:PDF
GTID:2268330401464584Subject:Electromagnetic field and microwave technology
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The sub-millimeter wave technology has extensive application prospects in theareas of space exploration, homeland security, radar imaging, medicine, biology, andmany other areas. Especially sub-millimeter wave wireless systems have attracted agreat deal of attention in recent years. The local oscillators are key components forsub-millimeter wave solid-state transceivers in the sub-millimeter wave wireless system.However, many of the available sub-millimeter wave sources today are very bulky,expensive, and inefficient, in some cases, only operate at cryogenic temperatures.Frequency multiplication technologies are attractive candidates for realizingsub-millimeter wave solid-state sources. In this thesis, on the basis of master ofsub-millimeter wave multipliers’ research status and in-depth analysis of the frequencymultiplication theory and technical principles, sub-millimeter wave tripler and doublerare mainly studied. In the study, Advanced Design System (ADS) for non-linear circuitanalysis and High Frequency Structure Simulator (HFSS) for3D electromagnetic fieldsimulation are used to simulate, analyze and optimize the performance of circuitscollaboratively.In the study of frequency tripler, a tripler centering at110GHz is developed. Thetripler is designed and developed with commercially available GaAs schottky barriervaractor diode. The whole circuit of this tripler is realized by microstrip. It featuresusing single serial varactor diode, simple circuit topology and easy to fabricate. Thetested results for the tripler show that the110GHz tripler achieves6%multiplicationefficiency at91.5GHz and the bandwidth is more than5GHz when the multiplicationefficiency is greater than2%. The change trends of the tested results and the simulationresults have good consistency.In the study of frequency doubler, a D band broadband balanced frequency doubleris developed. Commercially available GaAs schottky barrier varistor diodes are selectedto be non-linear device for frequency multiplication. Electromagnetic modeorthogonality is utilized to isolate the input and output circuits so as to achieve broadbandwidth. This balanced frequency doubler has the advantage of integration of the circuit structure’s broadband characteristic and resistive device’s broadbandcharacteristic. The tested results show that the typical multiplication efficiency of thebalanced doubler is2.5%, the peak multiplication efficiency is greater than4%and thebandwidth is more than15GHz when the multiplication efficiency is greater than2%.The performance of the doubler is better than the performance of some foreigncommercially available products and can meet the application requirement.
Keywords/Search Tags:Sub-millimeter wave, Multiplier, Schottky barrier diode, D band
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