Design And Preparation Of Anti-reflection And Protective Film In8～11μm Infrared Detection System

With the rapid development of modern military space technology, the requirement of infrared detector is increasing, the requirement of infrared optical element will stricter at the same time. This paper mainly studies the preparation of anti-reflection and protective film on the substrate of ZnS. We combine the coating method of dielectric and hard film, through the comparative analysis of different materials, finally, the carbide germanium (Ge1-xCx) as transition layer which between media film and DLC will be selectted. Using electron beam and ion source assisted deposition technology to manufacture the dielectric film, and using magnetron sputtering technology to manufacture the transition layer, at the end of process the DLC will be prepared by Chemical vapor deposition technique. This paper solve the problems of stress matching, and integrate different sedimentary processes, meanwhile get a stable process preparation process. Finally, we deposit the anti-reflection and protective film which average transmitted is92%, the hardness meets the requirements.