Research And Manufacture Of3.1～3.4Ghz120W Power Amplifier Module

Solid state amplifier modules have widely applications in communication and radar fields, As the important parts of electronic equipment, the modules have important meanings and effects to improve performance and reduce volume of electronic equipment. Based the module’s electronic parameters requirement, the system configuration and circuit were designed. A kind of S band power amplifier module was designed and manufactured successfully for engineering application in this paper, The testing results indicated that the design target was attained.The performance and matching circuit of Si power transistor are the key factor of module. Si power transistor was designed and manufactured. The impedance parameters were obtained with load-pull testing method. The circuit of sing-transistor amplifier and twin-transistors synthesis amplifier were designed successfully using Microwave Office software according to the measured impedance parameters. The high-power amplifier module was developed and manufactured successfully. It can delivers peak pulse output power of120W with8dB power gain and36%collector efficiency under the conditions of36V operation,300μs pulse width,10%duty cycle in the frequency band of3.1～3.4GHz. The module can withstand the VSWR of3:1mismatch. The good microwave performance and reliability were represented.