Krf Mask Template In Arf Exposure On Applied Research

In the integrated circuit manufacturing, lithography technology as the main method of microfabrication is a key technology in the fabrication of large scale integrated circuit. The geometrical size of single semiconductor device depends on the progress of this technology. And the integration level of chip advancing rapidly is also benefited by the rapid development of this technology.Presently, masks must be used to transfer the designed pattern onto the wafer during the lithography process. To avoid or reduce the pattern distortion, the pattern on the mask should be corrected considering the effect by different light source while design and fabricate the mask. But for different exposure lights have different reticle correction rules and the thickness of PSM will also be different so that the mask cannot be applied on the scanner of different light source. So the production resources cannot be utilized fully.In this thesis, a mask for KrF applied to ArF Scanner would be researched. Firstly, a suitable photo resist was selected according to the performance of different photo resist’s type. Then the best thickness was be found out after simulated by the Prolitho emulational software. The optimal NA and Sigma setting for ArF scanner was set by turning. Compared the baseline of KrF process, the best DOF and exposure energy were find out through the experiment. Then the ArF process window was determined by the UDOF and EL. To get the better CD, CDU which is mainly to check the overall CD situation and ADI&AEI profile which is to check the photo resist after develop and ETCH process was done. Finally, two LOTs wafer were manufactured to verify whether has the failure in the ArF lithography process.After above research, Mask for KrF can be compatible to ArF lithography process. The utilization of equipments has been improved and the cost of production has also been decreased.