Mask Template Lithography Process Research

Photo Mask plays an irreplaceable role in the manufacturing field of IC industry, photo mask supplier faced more and more tighter quality requirement with the development of IC new design. Image resolution process is a very important step in mask manufacturing, and almost up to 80 percent error comes from lithography and resist develop process. They are also an indispensable processing means in the fields such as nano-electronics, nano-optics, and low-dimensional artificial quantum structure. Many problems in electron beam lithography will become more serious such as pattern switching error caused by the drift of electric optical system and process disturbance, electron beam proximity effect which makes pattern resolution difficult to improve, resist structure’s adhesion or collapse is more and more insurmountable. With the aims of efficiently improving the accuracy of electron beam lithography and the quality of graphic generation, this dissertation studies the key processes technology in electron beam lithography and its application technology.This paper studied the photo mask for electron beam lithography technology, discusses the equipment performance maintenance requirements, studied by electron beam spot size linear control, deflection of the beam irradiation, and the precision control of scanning electron beam focusing optimization and their indicators on the mask lithography quality influence.From the overall linewidth error, and the error of different critical dimension uniformity, linearity error, image displacement error, and image boundary roughness, analysed its to the photomask plate key quality influence, then proposed the equipment key index maintenance, photoresist dose lithography, focusing height adjustment, baking, and developing condition selection method. Provide the method which based on measurement result in the electron scattering parameter extraction, according this method of extracting common electron beam lithography in the commonly used under the conditions of the electron scattering parameters, and in the actual,proximity effect correction gain good effect.Finally this article combines with the photoresist developing process to discuss and research improving the mask image resolution and improve overall linewidth uniformity.