The Chemically Amplified Resist Composition And Its Lithography For Electronic Beam

This paper has synthesized copolymer[P(MAA-co-MMA-co-tBMA-co-IBOMA)]by precipitate polymerization as based polymer.We also have synthesized diphenyliodonium trimethylsilyl triflate as photo-acid-generator(PAG) in the lab.Then,we well mixed up based resin[P(MAA-co-MMA-co-tBMA-co-IBOMA)],PAG,suitable solvent system and other additives to formulate Electronic-Beam(EB) Chemically Amplified Resist(CAR) in the cleanroom.Afterward we did lithography experminents in the cleanroom.The lithography process include coated,softed bake,expose,pre-exposed-bake(PEB),develop,hard bake and other lithography technical processes.During the copolymerization,we have choiced toluene as solvent,AIBN as initiator. Whereafter we obtaind a sereis of[P(MAA-MMA-tBMA-IBOMA)]with different molecular weight and compose,we took re-sedimentation to grade copolymer.Then,the products become based resin of EB CAR.In the PAG synthesized reaction,trimethylsilyl triflate and diphenyliodonium chloride dissolved in the methylene chloride,then processed reation with determination react conditions.After the resultants were taken sedimentation by aether,we achieve PAG as a photo-acid-generator.We have made several formulate experiments of EB CAR in the cleanroom.Through lithography,we have finally choose diethylene glycol dimethyl ether as mainly solvent,and ethylene glycol monomethylether as secondary solvent.Finally we got a product of photoresist.Through lithography experiments in the cleanroom,we have confirmed the load of based resin and PAG,coated condition,softed baked temperature and time,exposure dose and time, PEB temperature and time,as well as developer concentration and develop time.Furthermore,we have made EB-exposured lithography experiments in the CECT-13 research institute,and deterimented the EB CAR's sensitivity and resolution.