Integrated circuit(IC) develops very fast as Moore law’s predicts.90nm~45nm devicehas been manufactured. Now the device with feature size less than45nm is researched. Thewafer dimension has been increased from φ200mm to φ400mm. The manufacturing processhas become more complex alongside feature size reduction and wafer dimension increase.Copper has been used to replace Al as an interconnection material because of its lowerresistivity and higher resistance to electro-migration. Cu chemical and mechanical polishing(CMP) technology has been the only way to achieve global planarization process. CMP usesnanometer abrasive mechanical function and oxidizer chemical function to gain devicesurface planarization technology. The Slurry used in Cu CMP process is a key factor and itsperformance will affect post-CMP surface quality directly.This article will mainly investigate how to optimize the Cu CMP Slurry formulation andmanufacture process by analyzing Cu CMP Slurry chemical properties and the key factorswhich influence CMP performance. By introducing and analyzing Cu CMP process flow, thedefects in Cu CMP, Slurry polishing mechanism for Cu CMP process, the effects of Cu CMPSlurry components on CMP performance were investigated, and the Slurry formulation wasoptimized. Then the Slurry manufacturing process flowing, manufacturing instrumentsestablishment and manufacturing details controlling etc were studied. Basing on these studies,high volume manufacturing slurries with stable performance from batch to batch were gained.Finally, Cu CMP Slurry developing trend and the technology challenge are discussed. |