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The Study Of CMP Process And Materials With Low Pressure And Low Abrasive Concentration Of Copper Interconnection For GLSI

Posted on:2016-03-16Degree:DoctorType:Dissertation
Country:ChinaCandidate:Y LiFull Text:PDF
GTID:1108330479999361Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
With the feature size of integrated circuit device continuous shrinking and the silicon wafer size continuous increasing, the wafer surface must be global planarization in order to improve the reliability and performance of the device. And the chemical mechanical polishing(CMP) is the only practical technology to achieve global planarization for copper interconnects.With the increase of wiring layers and the application of low K dielectric material, CMP process with low pressure is now a key technology required research, at the same time, in order to reduce the residual abrasive particles on the wafer surface after CMP, control of CMP process with low abrasive concentration is very important. According to the development trend of CMP mentioned above, extensive research of theory and technology has been conducted on the technology and material for CMP with low pressure and low abrasive concentration.In the chemical mechanical planarization process with low abrasive concentration for copper interconnect, strong chelating ability of alkaline FA/O chelator provides assurance for high polishing rate and low surface roughness of copper film. The effect of Cu/SiO2 catalyst on chemical reaction rate in the CMP process was studied, and the lectrochemical analysis of the catalytic reaction was conducted. On the basis of theoretical analysis, chemical mechanical polishing with low abrasive concentration was carried on the 300 mmblanket copper film, the results showed that the polishing rate was 1120nm/min, the WIWNU was 0.059, the surface roughness was 5.49 nm, and the surface defects of copper film reduced obviously after polishing when the pressure was 13780 Pa, the speed was 65r/min, the flow rate was 175ml/min, the abrasive concentration was 0.5%, the oxidizing agent concentration was 0.5%, the FA/O type chelating agent concentration was 7%. The reasons of the WIWNU changes was explained by the flow model of slurry in micro channels, the liquid-solid chemical reaction dynamics equation was established which was suitable for the rough surface of the wafer in the CMP process with low abrasive concentration. Through the correction of related parameters in the classic formula, the material remove rate formula and planarization model used for CMP process was established.
Keywords/Search Tags:GLSI, slurry, low pressure and low abrasive concentration, chemical mechanical planarization, polishing rate, WIWNU
PDF Full Text Request
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