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Study On Low Abrasive Concentration Barrier Slurry Of Copper Interconnection For GLSI

Posted on:2018-06-25Degree:MasterType:Thesis
Country:ChinaCandidate:X YueFull Text:PDF
GTID:2428330596457828Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Integrated circuit(IC)is the core of information industry and high-tech,which is an important symbol to measure a country's industrial competitiveness and comprehensive national strength.Chemical mechanical planarization(CMP)is one of the core technologies in IC manufacturing.It is the only technology of achieving global and local planarization.The copper interconnect barrier layer CMP is the final step of planarization,which directly determines the yield and reliability of integrated circuit devices.Colloidal silica abrasive as an important part of the barrier layer polishing liquid,its concentration directly determines the polishing result.Because of high concentration of abrasive,the wafer surface roughness increases,the contamination of equipment and pipeline increase and the cost of roduction rises,the research of low abrasive concentration barrier layer slurry is important.According to this problem,extensive research of theory and technology has been conducted on low abrasive concentration barrier layer slurry.First of all,the paper used a new theoretical system proposed by the research group in mechanism research.By the FA/O chelating theory,amination theory,self-passivation theory and pH adjustment theory constitute chemical theory system of barrier layer slurry,realized selective controlled rate for a variety of materials,improved dishing and corrosion correction ability;nonionic surfactant stagnant layer theory,mass transfer theory,priority adsorption theory and nanoscale silicon abrasive grinding theory constitute mechanical theory system of barrier layer slurry,effectively solve the surface defects,reduced the roughness of wafer.Secondly,under the three methods common effect of small particle size silica sol,raise content of FA/O I chelating agent and join the guanidine hydrochloride auxiliaries,low abrasive concentration barrier layer slurry improved the material removal rate greatly.Use wiring chips to evaluate low abrasive concentration barrier layer slurry performance,get the removal rate of Cu in 280 ? /min or so,the removal rate of TEOS in 495 ? /min or so,all the dishing are less than 400 ?,all the corrosion are less than 200 ?,wiring groove copper resistance Rs are mainly concentrated in between 2.2 ~ 2.6 k ?,surface roughness Ra are under 0.4 um.All dates conform to the production standard;especially the dishing and corrosion correction capability and surface roughness Ra are obvious advantages.This suggests that low abrasive concentration barrier layer slurry has a prominent dishing and corrosion correction ability;reduce the wafer surface roughness Ra to a large degree.This research result has very strong practical application value.
Keywords/Search Tags:barrier layer, CMP, low concentration of abrasive, chelating agent, alkaline polishing slurry
PDF Full Text Request
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