Study On The Characteristics And Model Of Organic Semiconductor MOS Device

In recent decades, organic electronic devices which have the advantage of simple preparation process, low cost, expectation of mass production and compatible with flexible substrate, has enriched people’s vision greatly and attracted high attention of the industry professionals and scientists. People has did a lot of studies, but some physical properties are still faced new challenges both in theory and experiment, so it is very necessary to do some studies on the natural characteristic of organic semiconductor MOS device, which will promote the rapid development of organic electronic devices. This paper first introduces the model and the theory of MOS, through selecting the single layer of CuPc, VoPc and bilayer of CuPc/C60as organic semiconductor layer, adopting vacuum plating, we prepared the single layer of organic semiconductor devices and bilayer MOS organic semiconductor MOS device. Through C-V method, we extracted the parameters of insulating layer thickness; maximum depletion layer width; doping concentration; interface traps density; interface state density. We found that frequency had very small impact on doping concentration and hysteresis effect but high frequency had great impact on device C-V performance. At last, using the parameters combined with theoretical model, we simulated the device performance. The simulated curve and measured curve error is very close, which indicated that our parameters extraction method and theoretical model are valid.