CuPc Organic Photoelectric Transistor Preparation And Characterization

In the rapid development of information technology today, the organic semiconductors who have excellent electrical, optical and other properties, have attracted more and more people’s attention. Conventional inorganic semiconductor technology has become the backbone of information society technology, but the high cost of inorganic semiconductor process, preparation process complicated, inappropriate for flexible substrates and large-scale production, constrain their development. Organic electronic devices has the advantage of simple technology, low cost, prepared on large areas compatible with flexible substrates, fully meeting the needs of low-end electronic products, and the organic optoelectronic devices have been successfully applied in many fields.To study the optical properties of copper phthalocyanine, we have determined the organic semiconductor material copper phthalocyanine （CuPc） absorption spectrum, and through theoretical analysis calculated the minimum band gap of CuPc as 1.7eV. By vacuum coating process, we have successfully prepared a laminated structure of the organic photodiodes. With using of bromine tungsten light source measured the electro-optical characteristics of diode trial, the short-circuit photocurrent density is 28.2*10^-6A/mm^-2, the open circuit photovoltage is 0.18V. In the diode reverse zone, the light of current is much larger than the dark of current. Through the energy band diagram, we analyzed the photosensitive characteristics of the copper phthalocyanine thin film and the aluminum film‘s Schottky contact.Based on copper phthalocyanine thin film photodiodes, by using of vacuum coating process on glass, we have prepared a five-story vertical-type organic photovoltaic thin film transistor with the structure ITO/CuPc /Al /CuPc/Cu. We carried out the organic photoelectric transistor following two tests: Al set as the base and the Cu set as the collector, we tested out the device optical output characteristics. Through the output optical characteristic curve, we calculatedβfor 2.12, photo-current IL for the 3.3×10^-7A; when Cu set as the emitter, Al set as the base and the ITO set as the collector, we tested out the device optical output characteristics. We found that when illumination, V_b was not on the current control. The reason is because when the light exposured the collector, the photo-carrier injection affected the V_b control I_ec.