Performance Optimize Of Organic Field-Effect Transistors Based On CuPc/F₁₆CuPc

In the past twenty years,organic electronic devices are attractive in scientific research.The performance of organic electronic devices has been greatly improved after a long time research and experiment,and the stability of the device is nearly reached the standard of commercial uses which means the organic electronic device enter a new era of low cost and large area application.People shows great interest in the photosensitive organic field-effect transistors due to its high sensitivity,low cost and extensive preparation of spectral detection range.There is a great progress in organic field-effect transistors,but,there are still more work to do to optimize the performance and the stability of the device.In this paper,we mainly discuss the photosensitivity of photosensitive organic field effect transistor based on CuPc,and optimize the thickness of organic semiconductor layer.Because the organic semiconductor layer with a single thickness is not suitable for all incident optical power densities,we analyzed the performance of the device by considering the thickness of the semiconductor layer,the incident optical power density and other performance together.The results show that the device has the best electrical performance with the thickness of organic semiconductor is 40nm in dark.However,the 30 nm device shows the maximum optical response under illumination,so the light power density is low,the thickness of 30 nm CuPc organic semiconductor layer has the best photosensitive properties.When the optical power density is over 2000?W/cm~2,more photogenerated carriers generate in the 40nm thick device so the thickness of organic semiconductor layer should be considered when the incident power density is high.In this paper,we also optimize the dielectric layer structure,we prepare two kinds of double-layer dielectric layer of PS+SF:PVA and PS+SF by mixing the bio compatible materials-SF and traditional PVA dielectric material.We compare the performance of the device by AFM,which shows the surface roughness.And the results shows the surface of PS+SF:PVA dielectric layer is smoother,and the electric performance of it is better than the device with PS+SF.The performance of the electrical performance and bias stability are improved by mixing PVA reduces the surface dielectric trap density.