Simulation And Testing Of Thermal Characteristic Of Electrically Pumped Vertical-Cavity Surface-Emitting Semiconductor Lasers With New Structure

In this paper, the structures of radiation bridge electrode and AIN passivation film are introduced, a new980nm VCSEL of radiate bridge structure are designed and fabricated. By using ANSYS finite-element software, internal distribution of thermal fields and heat flow vector distribution of VCSEL are analyzed. The simulation and experimental results show that, the thermal resistance of VCSEL with the radiate bridge structure is3.22K/W, which is reduced by29%than the traditional VCSEL’s. According to experimental results, the thermal resistance and the decrement are2.94K/W and33%. respectively. The simulation result is consistent with the experimental result well. The threshold current of the VCSEL with radiate bridge structure is409mA. and is reduced by21%. The electronic-optic efficiency is20.4%, and the maximum output power is647mW. They are increased by34%and50%, respectively. The simulation and experimental results show that both the thermal and photoelectric characteristics of the VCSEL with the new radiate bridge structure are much better than the traditional VCSEL’s. The new structure VCSEL designed here provides a valuable reference and a new approach in the research of high efficiency and high power VCSEL.