Simulation And Trial Production Of Nanometer Floating Gate Memory Device Characterization And Characteristics

Facing the development trend of semiconductor manufacturing technology, thetraditional Nonvolatile memories are restricted to smaller size, because of theircontinuous floating gate. It’s necessary to develop new floating gate memory, tomaintain their working mechanism. The nanocrystal (NC) floating gate memory is aneffective structure to solve this problem, and that boost the NC floating gate memoryto study and development greatly.This paper describes the background of the NC floating gate memories,including Nonvolatile memory market prospects and development situation, as well asthe advantages of the NC floating gate memories. The theoretical knowledge of theNonvolatile memories and the feature of the NC floating gate memory are alsointroduced. The software of semiconductor process simulation Tsuprem4and thesoftware of semiconductor device simulation Medici are used to model a silicon NCfloating gate memory and simulate its electrical properties. Another, N-type channelsilicon NC floating gate memories with various channel length are trial-produced andimplement routine testing analysis to them.The following workings have been specifically finished:(a): Tsuprem4was used to build a silicon NC floating gate memory’ simulationmodel. And then Medici was employed to simulate its electrical properties. After that,the effects to the memory storage characteristics (especially Memory Window) causedby some important structural parameters of the memory were also studied. At last ofthe simulating part, the retention of silicon NC floating gate memory was modeled andanalyzed by Matlab modeling.(b): Discussing the method of producing the silicon nanocrystals and thetechnology process of manufacturing silicon NC floating gate memories with astandard2μm CMOS process. Trial-producing a supply of N-type silicon NC floatinggate memories with various channel length successfully, by joining the the method ofproducing the silicon nanocrystals (ion implantation and annealing) intoSingle-Poly-Single-Metal standard CMOS process (SPSM: a simplified NTU-MFL 2μm NWell CMOS process).(c): Testing analysis to manufactured silicon NC floating gate memories werecarried out at room temperature, employing a testing platform build by KEITHLEY4200-SCS and EB6prober. The testing was including the TEM section analysis, therelation between the pluses of write/erase operation and the Memory Window, as wellas the Endurance and Retention of memories. The results of testing showed that thesilicon NC floating gate memories fabricated this time owned a larger MemoryWindow, and excellent Endurance and Retention.