Design Of2.4GHz Fully-integrated RF Power Amplifier

RFIC set more high requirements for high integration, low-cost and low power. Because of CMOS technology’s high integration、 low power consumption low cost it makes us possible to achieve complex multimode circuit in one chip. But it is an important problem to design a power amplifier with high quality, for the CMOS process’s active devices with Low breakdown voltage, the passive devices and substrate with high loss.This paper uses CMOS technology to design a2.4GHz fully-integrated RF power amplifier, and adopt corresponding design method in order to obtain good performance of the power amplifier. Under the condition of the supply voltage of3.3V, this power amplifier based on single-ended, uses three-stage amplifying structure. The first stage adopts the form of mirror current source providing a stable bias for the circuit; the second stage adopts self-baised cascode structures, Which increase the gain and reverse isolation; The third stage adopts a structure with single-ended. Through to achieve the design goal, determine the appropriate static working point, ensuring the output power of the amplifier. Ail matched elements and flow components are integrated into the chip, without the need for external discrete components, in order to improve the integration degree.Based on the SMIC0.18RF CMOS model library, and do the simulation for the power amplifier. The results showed that under the supply voltage of3.3V, its power gain is25.52dB, P1dB is23dBm, with23%of PAE at P1dB. The performance of the circuit can meet the2.4GHz WLAN system for the power amplifier requirements. We use the SMIC0.18RF CMOS technology to realize the design of the power amplifier, and its layout size is1550μm×980μm.