Based On The Numerical Simulation Software Of The Thin Layer Of Soi High-voltage Device Design

SOI called silicon on insulator, has a unique full dielectric isolation structure,with its high speed、high reliability、low power consumption、radioresistance and many other advantages, It was wide range used in high voltage integrated circuit (HVIC:High Voltage Integrated Circuit). which is core of in the device, SOI lateral high voltage devices due to the longitudinal breakdown voltage lower confine in the high voltage power integrated circuit application. Improve longitudinal voltage is an important research direction.TCAD (Technology Computer Aided Design) is a semiconductor process simulation and device simulation computer-aided design software, It can be used to process, device, circuit design and verification of IC, it is an indispensable tool in the design and manufacture.This paper uses linear doping technology to design a thin layer of SOI high voltage devices, the SOI material on top of the thin silicon layer thickness of1.5μm, dielectric isolation layer thickness of3μm. From the basic principle of PN junction breakdown voltage, and then to SOI breakdown theory with SOI RESURF (Reduce the SURface Field) principle, through mathematical derivation, a thorough understanding of the breakdown characteristics of the device and voltage characteristics. The design of the SOI lateral high voltage device of the drift region using a linear variable doping technique, from the source to the drain device of doping concentration increases linearly.This paper introduces two kinds of numerical simulation software, respectively TSuprem-4and Medici.TSuprem-4is mainly used for silicon integrated circuits and discrete device manufacturing process simulation. Involved in the process include: oxidation, photolithography, etching, injection process. Medici on potential field and carrier distribution modeling, through the Poisson equation and continuity equation of current obtain specific bias electrical characteristics, solving and verify the design parameters of the device and performance, using Medici simulation software, obtained the device off state breakdown voltage of490V,300V on-state breakdown voltage, and the threshold voltage1.5V.